Crystal growth of device quality GaAs in space

Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration

Crystal growth of device quality GaAs in space

It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail

Crystal growth of device quality GaAs in space

The apparatus and techniques used in effort to determine the relationships between crystal growth and electronic properties are described with emphasis on electroepitaxy and melt-grown gallium aresenide crystal. Applications of deep level transient spectroscopy, derivative photocapitance spectroscopy, and SEM-cathodoluminescene in characterizing wide bandgap semiconductors; determining photoionization in MOS, Schottky barriers, and p-n junctions; and for identifying inhomogeneities are examined, as well as the compensation of indium phosphide

Crystal growth of device quality GaAs in space

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance

Present status of GaAs

An extensive literature survey on GaAs was carried out for the period December 31, 1970, to December 31, 1977. The increasing interest in GaAs device structures increased steadily during that period. The leading research and development centers and the specific areas of interest were identified. A workshop on GaAs was held in November 1977 to assess the present status of melt-grown GaAs and the existing needs for reliable chemical, structural, and electronic characterization methods. It was concluded that the present available bulk GaAs crystals are of poor quality and that GaAs technology is lagging demonstrated or potentially feasible GaAs devices and systems

Distribution of oxygen in silicon and its effects on electronic characteristics on a microscale

The microdistribution of oxygen in silicon was obtained by scanning IR absorption in as grown Czochralski crystals. The crystals were subsequently submitted to various heat treatments. The profiles of the generated thermal donors were determined by spreading resistance measurements. Contrary to the prevailing views, it was found that the concentration of the activated thermal donors is not strictly a function of the oxygen concentration, but depends strongly on an additional factor, which was shown to be associated with vacancy concentration. These conclusions could only be reached on the basis of microscale characterization. In fact, commonly employed macroscale analysis has led to erroneous conclusions

Microdistribution of oxygen in silicon and its effects on electronic properties

The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations

Statistical mechanics of double-stranded semi-flexible polymers

We study the statistical mechanics of double-stranded semi-flexible polymers using both analytical techniques and simulation. We find a transition at some finite temperature, from a type of short range order to a fundamentally different sort of short range order. In the high temperature regime, the 2-point correlation functions of the object are identical to worm-like chains, while in the low temperature regime they are different due to a twist structure. In the low temperature phase, the polymers develop a kink-rod structure which could clarify some recent puzzling experiments on actin.Comment: 4 pages, 3 figures; final version for publication - slight modifications to text and figure

Nature of the metal-nonmetal transition in metal-ammonia solutions. I. Solvated electrons at low metal concentrations

Using a theory of polarizable fluids, we extend a variational treatment of an excess electron to the many-electron case corresponding to finite metal concentrations in metal-ammonia solutions (MAS). We evaluate dielectric, optical, and thermodynamical properties of MAS at low metal concentrations. Our semi-analytical calculations based on a mean-spherical approximation correlate well with the experimental data on the concentration and the temperature dependencies of the dielectric constant and the optical absorption spectrum. The properties are found to be mainly determined by the induced dipolar interactions between localized solvated electrons, which result in the two main effects: the dispersion attractions between the electrons and a sharp increase in the static dielectric constant of the solution. The first effect provides a classical phase separation for the light alkali metal solutes (Li, Na, K) below a critical temperature. The second effect leads to a dielectric instability, i.e., polarization catastrophe, which is the onset of metallization. The locus of the calculated critical concentrations is in a good agreement with the experimental phase diagram of Na-NH3 solutions. The proposed mechanism of the metal-nonmetal transition is quite general and may occur in systems involving self-trapped quantum quasiparticles.Comment: 13 figures, 42 page

Optical absorption in boron clusters B6_{6} and B6+_{6}^{+} : A first principles configuration interaction approach

The linear optical absorption spectra in neutral boron cluster B$_{6}$ and cationic B$_{6}^{+}$ are calculated using a first principles correlated electron approach. The geometries of several low-lying isomers of these clusters were optimized at the coupled-cluster singles doubles (CCSD) level of theory. With these optimized ground-state geometries, excited states of different isomers were computed using the singles configuration-interaction (SCI) approach. The many body wavefunctions of various excited states have been analysed and the nature of optical excitation involved are found to be of collective, plasmonic type.Comment: 22 pages, 38 figures. An invited article submitted to European Physical Journal D. This work was presented in the International Symposium on Small Particles and Inorganic Clusters - XVI, held in Leuven, Belgiu